Product Summary

The JANTX2N6806 is a power MOSFET transistor. The efficient geometry and unique processing of this latest State of the Art design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability. The JANTX2N6806 is well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.

Parametrics

JANTX2N6806 absolute maximum ratings: (1)ID @ VGS = 0V, TC = 25℃, Continuous Drain Current: -6.5A; (2)ID @ VGS = 0V, TC = 100℃, Continuous Drain Current: -4.0A; (3)IDM, Pulsed Drain Current: 28W; (4)PD @ TC = 25℃, Max. Power Dissipation: 75 W; (5)Linear Derating Factor: 0.60 W/℃; (6)VGS, Gate-to-Source Voltage: ±20 V; (7)EAS, Single Pulse Avalanche Energy: 66 mJ; (8)IAR, Avalanche Current: -6.5 A; (9)EAR, Repetitive Avalanche Energy: 7.5 mJ; (10)dv/dt, Peak Diode Recovery dv/dt: -5.0 V/ns; (11)TJ, TSTG, Operating Junction and Storage Temperature Range: -55 to 150℃; (12)Lead Temperature: 300℃ (0.063 in. (1.6mm) from case for 10s); (13)Weight: 11.5 (typical) g.

Features

JANTX2N6806 features: (1)Repetitive Avalanche Ratings; (2)Dynamic dv/dt Rating; (3)Hermetically Sealed; (4)Simple Drive Requirements; (5)Ease of Paralleling.

Diagrams

JANTX2N6806 test circuit

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
JANTX2N6806
JANTX2N6806
Other

Data Sheet
Negotiable 
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
JANTX
JANTX
Other

Data Sheet
Negotiable 
JANTX1N3957
JANTX1N3957
TE Connectivity
General Purpose / Industrial Relays 1000 V DIODE
Data Sheet
0-1: $40.33
1-25: $38.78
25-50: $37.09
50-100: $35.78
JANTX1N5615
JANTX1N5615

DIODE 1A 200V AXIAL
Data Sheet
Negotiable 
JANTX1N6067A
JANTX1N6067A
Other

Data Sheet
Negotiable 
JANTX1N6101
JANTX1N6101
Other

Data Sheet
Negotiable 
JANTX1N6762
JANTX1N6762
Other

Data Sheet
Negotiable